|
Silicon
Silicon is
commonly used as substrate material for infrared reflectors and windows in the
1.5 - 8 micron region. The strong absorption band at 9 microns makes it
unsuitable for CO2 laser transmission applications, but it is most
used for laser mirrors because of its high thermal conductivity and low density.
Silicon is also useful as a transmitter in the 20 micron range.
Specification of
typical Dia.200 mm wafer.
|
Method of growth |
CZ |
|
Tolerance of Diameter |
200 mm +/- 0.2 mm |
|
Type |
P type/Boron doped
N type/Phosphorus doped |
|
Orientation |
<100> / <111> |
|
Resistivity (Ω.cm) |
0.1-50 |
|
Change of radial resistivity(%) |
P Type < 5
N Type < 15 |
|
Thickness |
on request |
|
TIR (μm) |
< 2.0 |
|
STIRmax (μm) |
< 0.3 |
|
Warp (μm) |
< 20 |
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